FCH072N60F 600v n-channel frfet ? mosfet ?2013 fairchild semiconductor corporation FCH072N60F rev. c3 www.fairchildsemi.com 1 march 2013 FCH072N60F n-channel superfe t ? ii frfet ? m osfet 600 v, 52 a, 72 m features ?r ds(on) = 65 m (typ) ? ultra low gate charge (typ. q g = 165 nc) ? low effective output capacitance ? 100% avalanche tested ? rohs compliant description superfet ? ii mosfet is fairchild semiconductor ? ?s first gen- eration of high voltage super-juncti on (sj) mosfet family that is utilizing charge balance technology for outstanding low on-resis- tance and lower gate charge performance.this advanced tech- nology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. consequent ly, superfetii mosfet is suitable for various ac/dc power conversion for system minia- turization and higher efficiency. d g s g s d to-247 mosfet maximum ratings t c = 25 o c unless otherwise noted thermal characteristics symbol parameter ratings unit v dss drain to source voltage 600 v v gss gate to source voltage -dc 20 v -ac 30 i d drain current -continuous (t c = 25 o c) 52 a -continuous (t c = 100 o c) 33 i dm drain current - pulsed (note 1) 156 a e as single pulsed avalanche energy (note 2) 1128 mj i ar avalanche current 9.5 a e ar repetitive avalanche energy 4.8 mj dv/dt mosfet dv/d t 100 v/ns peak diode recovery dv/dt (note 3) 50 v/ns p d power dissipation (t c = 25 o c) 481 w - derate above 25 o c3 . 8 5 w / o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter ratings unit r jc thermal resistance, junction to case 0.26 o c/w r ja thermal resistance, junction to ambient 40 *drain current limited by maximum junction temperature
FCH072N60F 600v n-channel frfet ? mosfet www.fairchildsemi.com 2 ?2013 fairchild semiconductor corporation FCH072N60F rev. c3 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity FCH072N60F FCH072N60F to-247 - - 30 symbol parameter test conditions min. typ. max. unit bv dss drain to source breakdown voltage i d = 10ma, v gs = 0v, t c = 25 o c 600 - - v i d = 10ma, v gs = 0v, t c = 150 o c 650 - - v bv dss t j breakdown voltage temperature coefficient i d = 10ma, referenced to 25 o c - 0.67 - v/ o c i dss zero gate voltage drain current v ds = 480v, v gs = 0v - - 1 a v ds = 480v, v gs = 0v, t c = 125 o c- - 10 i gss gate to body leakage current v gs = 20v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a3-5v r ds(on) static drain to source on resistance v gs = 10v, i d = 26a - 65 72 m g fs forward transconductance v ds = 20v, i d = 26a - 42 - s c iss input capacitance v ds = 100v, v gs = 0v f = 1mhz - 6510 8660 pf c oss output capacitance - 205 275 pf c rss reverse transfer capacitance - 1.5 2.5 pf c oss output capacitance v ds = 380v, v gs = 0v, f = 1mhz - 110 - pf c oss eff. effective output capacitance v ds = 0v to 480v, v gs = 0v - 441 - pf q g(tot) total gate charge at 10v v ds = 380v, i d = 26a, v gs = 10v (note 4) - 165 215 nc q gs gate to source gate charge - 36 - nc q gd gate to drain ?miller? charge - 66 - nc esr equivalent series resistance(g-s) drain open - 0.78 - t d(on) turn-on delay time v dd = 380v, i d = 26a r g = 4.7 (note 4) -4396ns t r turn-on rise time - 38 86 ns t d(off) turn-off delay time - 140 290 ns t f turn-off fall time - 25 60 ns i s maximum continuous drain to source diode forward current - - 52 a i sm maximum pulsed drain to source diode forward current - - 156 a v sd drain to source diode forward voltage v gs = 0v, i sd = 26a - - 1.2 v t rr reverse recovery time v gs = 0v, i sd = 26a di f /dt = 100a/ s - 165 - ns q rr reverse recovery charge - 1.15 - c notes: 1. repetitive rating: pulse width limi ted by maximum junction temperature 2. i as = 9.5a, r g = 25 , starting t j = 25 c 3. i sd 26a, di/dt 200a/ s, v dd 380v, starting t j = 25 c 4. essentially independent of operating temperature typical characteristics
FCH072N60F 600v n-channel frfet ? mosfet www.fairchildsemi.com 3 ?2013 fairchild semiconductor corporation FCH072N60F rev. c3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.2 1 10 20 1 10 100 200 *notes: 1. 250 s pulse test 2. t c = 25 o c i d , drain current[a] v ds , drain-source voltage[v] v gs = 10.0v 8.0v 7.0v 6.5v 6.0v 5.5v 246810 1 10 100 300 -55 o c 150 o c *notes: 1. v ds = 10v 2. 250 s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 050100150 0.04 0.06 0.08 0.10 0.12 0.14 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ ], drain-source on-resistance i d , drain current [a] 0.0 0.4 0.8 1.2 1.6 1e-3 0.01 0.1 1 10 100 200 -55 o c *notes: 1. v gs = 0v 2. 250 s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0.1 1 10 100 600 1 10 100 1000 10000 100000 c oss c iss c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 0 306090120150180 0 2 4 6 8 10 *note: i d = 26a v ds = 120v v ds = 300v v ds = 480v v gs , gate-source volt age [v] q g , total gate charge [nc]
FCH072N60F 600v n-channel frfet ? mosfet www.fairchildsemi.com 4 ?2013 fairchild semiconductor corporation FCH072N60F rev. c3 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. eoss vs. drain to source voltage -80 -40 0 40 80 120 160 0.90 0.96 1.02 1.08 1.11 *notes: 1. v gs = 0v 2. i d = 10ma bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c] -80 -40 0 40 80 120 160 0.5 1.0 1.5 2.0 2.5 *notes: 1. v gs = 10v 2. i d = 26 a r ds(o n) , [normalized] drain-source on-resistance t j , junction temperature [ o c] 0.1 1 10 100 1000 0.1 1 10 100 300 10 s 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 25 50 75 100 125 150 0 20 40 60 i d , drain current [a] t c , case temperature [ o c] 0 100 200 300 400 500 600 0 7 14 21 28 e oss , [ j] v ds , drain to source voltage [v]
FCH072N60F 600v n-channel frfet ? mosfet www.fairchildsemi.com 5 ?2013 fairchild semiconductor corporation FCH072N60F rev. c3 typical performance characteristics (continued) figure 12 . transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 0.01 0.1 0.5 0.01 0.1 0. 2 0.05 0. 0 2 *n otes: 1. z jc (t ) = 0. 2 6 o c/ w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [z jc ] rectangular pulse duration [sec] t 1 p dm t 2
FCH072N60F 600v n-channel frfet ? mosfet www.fairchildsemi.com 6 ?2013 fairchild semiconductor corporation FCH072N60F rev. c3 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
FCH072N60F 600v n-channel frfet ? mosfet www.fairchildsemi.com 7 ?2013 fairchild semiconductor corporation FCH072N60F rev. c3 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
FCH072N60F 600v n-channel frfet ? mosfet www.fairchildsemi.com 8 ?2013 fairchild semiconductor corporation FCH072N60F rev. c3 mechanical dimensions to-247 dimensions in millimeters
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www.fairchildsemi.com 9 ?2013 fairchild semiconductor corporation FCH072N60F rev. c3
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